DocumentCode
2994511
Title
The Influence of Preparation Conditions on the Photoluminescence of Porous Silicon Material
Author
Yuan Meiling ; Tang Lu ; Wang Qingnian
Author_Institution
Dept. of Phys., Nanchang Univ., Nanchang, China
fYear
2012
fDate
21-23 May 2012
Firstpage
1
Lastpage
3
Abstract
Under the different preparation conditions, the photoluminescence characteristic of porous silicon was different. This was a primary reason that caused many researches had the difference. This article used electrochemistry method to prepare porous silicon. The main research was that the influence of preparation conditions on the porous silicon´s photoluminescence characteristic, the preparation conditions included the density of electrolyte, current density, corrosion time, lying time and so on.
Keywords
corrosion; current density; electrochemistry; electrolytes; elemental semiconductors; porous semiconductors; semiconductor growth; silicon; Si; corrosion time; current density; electrochemistry method; electrolyte density; lying time; porous silicon photoluminescence characteristic; preparation conditions; Corrosion; Current density; Lighting; Photoluminescence; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location
Shanghai
ISSN
2156-8464
Print_ISBN
978-1-4577-0909-8
Type
conf
DOI
10.1109/SOPO.2012.6270528
Filename
6270528
Link To Document