DocumentCode :
2994511
Title :
The Influence of Preparation Conditions on the Photoluminescence of Porous Silicon Material
Author :
Yuan Meiling ; Tang Lu ; Wang Qingnian
Author_Institution :
Dept. of Phys., Nanchang Univ., Nanchang, China
fYear :
2012
fDate :
21-23 May 2012
Firstpage :
1
Lastpage :
3
Abstract :
Under the different preparation conditions, the photoluminescence characteristic of porous silicon was different. This was a primary reason that caused many researches had the difference. This article used electrochemistry method to prepare porous silicon. The main research was that the influence of preparation conditions on the porous silicon´s photoluminescence characteristic, the preparation conditions included the density of electrolyte, current density, corrosion time, lying time and so on.
Keywords :
corrosion; current density; electrochemistry; electrolytes; elemental semiconductors; porous semiconductors; semiconductor growth; silicon; Si; corrosion time; current density; electrochemistry method; electrolyte density; lying time; porous silicon photoluminescence characteristic; preparation conditions; Corrosion; Current density; Lighting; Photoluminescence; Silicon; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location :
Shanghai
ISSN :
2156-8464
Print_ISBN :
978-1-4577-0909-8
Type :
conf
DOI :
10.1109/SOPO.2012.6270528
Filename :
6270528
Link To Document :
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