DocumentCode :
2994604
Title :
Architectural power management for high leakage technologies
Author :
Kulkarni, Manish ; Sheth, Khushboo ; Agrawal, Vishwani D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., Auburn, AL, USA
fYear :
2011
fDate :
14-16 March 2011
Firstpage :
67
Lastpage :
72
Abstract :
We propose a power-performance trade off methodology for microprocessors. An instruction named slowdown for low power (SLOP) is introduced. Functionally, it resembles the conventional NOP but requires power-specific hardware implementation. Depending upon the power reduction requirement, adequate number of SLOP´s are automatically inserted in the instruction stream by the power management hardware. While processing a SLOP, additional power control signals are generated for various units; the ALU is powered down, caches are put in drowsy mode, and register file and pipeline registers may be fully or partially clock-gated. Simulation of a five-stage pipelined 32-bit MIPS processor shows that the SLOP method, termed instruction slowdown (ISD), becomes more effective than a conventional clock slowdown (CSD) when leakage is high. For 32nm CMOS technology, ISD can save more than 70% power compared to about 40% by CSD. The paper shows that power reduction through a judicious choice of slowdown factor and the method adopted, clock slowdown for low leakage and instruction slowdown for high leakage, can enhance the battery lifetime as well.
Keywords :
battery management systems; low-power electronics; microprocessor chips; power integrated circuits; architectural power management; high leakage technologies; instruction slowdown; power control signals; power-specific hardware implementation; slowdown for low power; Batteries; Clocks; Delta modulation; Hardware; Logic gates; Pipelines; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
System Theory (SSST), 2011 IEEE 43rd Southeastern Symposium on
Conference_Location :
Auburn, AL
ISSN :
0094-2898
Print_ISBN :
978-1-4244-9594-8
Type :
conf
DOI :
10.1109/SSST.2011.5753778
Filename :
5753778
Link To Document :
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