DocumentCode :
2994628
Title :
Variability modeling of RF characteristics for multi-finger MOSFETs using statistical methods
Author :
Hyuck Sang Yim ; Jung Han Kang ; Ilgu Yun
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
fYear :
2008
fDate :
4-6 Nov. 2008
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, the AC circuit model of multi-finger MOSFET for RF application is investigated. Test structures varying with the gate width and the number of fingers are fabricated in 0.35-μm TSMC process. The s-parameters of test structures are measured from 50MHz to 10GHz. The equivalent circuit model is proposed by hybrids of BSIM3 and the parasitic components. The parasitic components are extracted by optimizing the parameters using the measured DC and RF characteristics. Based on the extracted circuit models, the extracted parameters are verified by the analysis of variance.
Keywords :
MOSFET; S-parameters; equivalent circuits; semiconductor device models; statistical analysis; AC circuit model; RF characteristics; TSMC process; equivalent circuit model; frequency 50 MHz to 10 GHz; multi-finger MOSFET; s-parameters; size 0.35 mum; statistical methods; test structures; variability modeling; Circuit faults; Fault diagnosis; Field programmable gate arrays; Logic testing; MOSFETs; Manufacturing; Radio frequency; Statistical analysis; Table lookup; Tiles;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Manufacturing Technology Symposium (IEMT), 2008 33rd IEEE/CPMT International
Conference_Location :
Penang
ISSN :
1089-8190
Print_ISBN :
978-1-4244-3392-6
Electronic_ISBN :
1089-8190
Type :
conf
DOI :
10.1109/IEMT.2008.5507890
Filename :
5507890
Link To Document :
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