Title :
An Ultra Low Power ESD Protected Mixer in 90nm RF CMOS
Author :
Salmeh, Roghoyeh
Author_Institution :
Univ. of Calgary, Calgary
Abstract :
Behavioral analysis of a low voltage/low power mixer in 90 nm CMOS technology is demonstrated. The down conversion mixer achieves a measured conversion gain of 2.55 dB and input 1 dB compression point of- 6.5 dBm. The mixer draws only 0.24 mA from a 1.2 V supply. A wide band output IF of 500 kHz up to 100 MHz was also achieved.
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF mixers; electrostatic discharge; integrated circuit layout; integrated circuit testing; low-power electronics; nanoelectronics; RF CMOS technology; conversion gain; current 0.24 mA; down conversion mixer; gain 2.55 dB; layout design; size 90 nm; ultra low power ESD protected mixer; voltage 1.2 V; CMOS technology; Circuits; Electrostatic discharge; Energy consumption; Linearity; Low voltage; Noise figure; Personal digital assistants; Protection; Radio frequency; 90nm; Low power; Low voltage; RF CMOS; down conversion mixer;
Conference_Titel :
Circuits and Systems, 2006. MWSCAS '06. 49th IEEE International Midwest Symposium on
Conference_Location :
San Juan
Print_ISBN :
1-4244-0172-0
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2006.381991
