Title :
Residual strain effects on large aspect ratio micro-diaphragms [capacitance transducer]
Author :
Hijab, Raif S. ; Muller, Richard S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
The authors describe techniques that result in low-strain materials and that reduce the effects of residual strain in microdiaphragms, which are used in capacitive-readout sensors. Square polysilicon grilles and perforated diaphragms made from both single and double polysilicon layers and from single-crystal silicon, with aspect ratios (side/thickness) of up to 1000 and very low compressive strain (about 6×10-5), have been fabricated. Strain reduction is achieved by combining thermal annealing with one of two mechanical design techniques. The first technique makes use of a series of cantilever beams to support the diaphragms. In a second procedure, corrugated surfaces, in thinned membranes of single-crystal silicon are formed. The corrugations result from the use of boron doping and anisotropic silicon etching. In both of these techniques to produce low-strain diaphragms, an etched cavity is purposely formed in the substrate crystal below them. Only one-sided processing of wafers is used, thus aiding reproducibility and providing ease of compatibility with a metal-oxide-semiconductor process. A fast etching sacrificial-support layer (phosphorus-doped chemical-vapor-deposited oxide) is used
Keywords :
annealing; capacitance; deformation; diaphragms; electric sensing devices; elemental semiconductors; etching; semiconductor devices; semiconductor technology; silicon; transducers; B doping; P doped CVD oxide; anisotropic etching; cantilever beams; capacitance transducer; capacitive-readout sensors; chemical-vapor-deposited oxide; compressive strain; corrugated surfaces; etched cavity; fast etching sacrificial-support layer; large aspect ratio; low-strain diaphragms; low-strain materials; mechanical design techniques; micro-diaphragms; microdiaphragms; one-sided water processing; perforated diaphragms; polycrystalline Si:B; residual strain effects; semiconductor; single crystal Si; square grilles; strain reduction; thermal annealing; thinned membranes; Annealing; Biomembranes; Boron; Capacitive sensors; Corrugated surfaces; Doping; Etching; Sensor phenomena and characterization; Silicon; Structural beams;
Conference_Titel :
Micro Electro Mechanical Systems, 1989, Proceedings, An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots. IEEE
Conference_Location :
Salt Lake City, UT
DOI :
10.1109/MEMSYS.1989.77977