• DocumentCode
    2994939
  • Title

    Numerical Modelling and Analysis of Infrared Testing in Delaminations of Pressurepipes Using ANSYS

  • Author

    Deng, Changhai ; Wan, Xiong ; Zhang, Zhiming ; Zhao, Jiakun ; Ye, Jianhua ; Chen, Qi ; Huang, Pingbo ; Yu, Wei

  • Author_Institution
    Key Lab. of Nondestructive Testing, Nanchang Hangkong Univ., Nanchang, China
  • fYear
    2012
  • fDate
    21-23 May 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Numerical modeling of high temperature pressure pipes including delaminations were constructed using ANSYS, then heat flux and convection are loaded on the outside surface. The influence of pulse excitation parameters, depth of defects, thickness of defects, length of defects on maximum thermal contrast and time for maximum thermal contrast are analysised. Length of defects are measured by using the methed of full width at half maximum .According to the research result, it is known that the maximum thermal contrast increased linearly with the product of excitation time and heat flux. It increases also as the defect gets thicker and less deeper, but will not increase always as the length of defects increase. As to the time for maximum thermal contrast, it appears more later with longer excitation time, deeper and thicker defects, however, which has nothing to do with the heat flux. Full wide at half maximum is a good method to measure the length of defects for its small error.
  • Keywords
    convection; delamination; mechanical engineering computing; mechanical testing; numerical analysis; pipes; ANSYS software; convection; defect depth; defect length; defect thickness; excitation time; full width method; heat flux; infrared testing; maximum thermal contrast; numerical analysis; numerical modelling; pressure pipe delamination; pulse excitation parameter; Delamination; Equations; Heating; Materials; Mathematical model; Temperature measurement; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Optoelectronics (SOPO), 2012 Symposium on
  • Conference_Location
    Shanghai
  • ISSN
    2156-8464
  • Print_ISBN
    978-1-4577-0909-8
  • Type

    conf

  • DOI
    10.1109/SOPO.2012.6270547
  • Filename
    6270547