• DocumentCode
    2994968
  • Title

    Molecular beam epitaxial growth of quantum wire heterostructures using (GaP)x/(InAs)y short period superlattices on InP

  • Author

    Moy, A.M. ; Chou, L.J. ; Hsieh, K.C. ; Cheng, K.Y.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
  • fYear
    1997
  • fDate
    11-15 May 1997
  • Firstpage
    90
  • Lastpage
    91
  • Abstract
    Semiconductor quantum wires (QWR) are of great interest for their theoretically predicted advantages over the current quantum well (QW) technology. We report the application of the strain-induced lateral-layer ordering (SILO) process to a novel material system, spontaneously creating GaInAsP QWRs in situ on InP. Through molecular beam epitaxy, combinations of short-period superlattice (SPS) constituents are deposited on the growth surface
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wires; semiconductor superlattices; GaP-InAs; molecular beam epitaxial growth; semiconductor quantum wire heterostructure; short period superlattice; strain-induced lateral-layer ordering; Capacitive sensors; Carrier confinement; Indium phosphide; Molecular beam epitaxial growth; Photoluminescence; Polarization; Quantum computing; Quantum mechanics; Temperature; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1997., International Conference on
  • Conference_Location
    Cape Cod, MA
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-3898-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1997.600037
  • Filename
    600037
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2994968