Direct calculation of tunneling conductivity profiles of novel InP/InGaAs superlattice structures, by means of the Green´s function

We propose a first principles method of calculating the tunneling conductivity of superlattice (SL) InP/In(x)Ga(1-x)As structures. The method we follow is based on the generalized Kubo-Greenwood formulation and on the causal form of Green´s function. The perpendicular (along the growth direction) conductivity, involves a group of parameters directly connected to the geometry of the device (hence upon one´s disposal), such as (I) quantum well width (II) potential barrier thickness and (III) selective doping of potential barrier regions in order to increase carrier collection and pin the Fermi level within the minibands. Such an alignment provides a tunneling transport from layer to layer, making the barriers potentially transparent for the electrons, thus increasing the tunneling conductivity