Title :
Circuit and process parameters issue for 1.57542GHz low noise amplifier in 0.35µm BiCMOS technology
Author :
Djugova, Alena ; Radic, Jelena ; Videnovic-Misic, Mirjana
Author_Institution :
Dept. for Power, Electron. & Commun. Eng., Electron. & Commun. Eng., Novi Sad, Serbia
Abstract :
In this paper a two-stage low noise amplifier (LNA) in 0.35 mum BiCMOS technology is presented. The first LNA stage is a common source amplifier in the cascode configuration where source inductor degeneration is used for narrowband input matching at 1.57542 GHz. Additional common source amplifier, as the second LNA stage, is added in order to increase total forward gain (S21) of the LNA. Optimized LNA has -12.01 dB input return loss (S11), high reverse isolation S12 = -39.19 dB, very high voltage gain S21 = 23.83 dB, output return loss S22 = -10.61 dB, noise figure of 2.035 dB and power consumption of 9.9 mA at 3.3 V. The presented LNA offers circuit stability parameters B1f = 953.3 m and Kf = 2.558 Significance of the process and mismatch variation and its influence on circuit performance has been demonstrated with Monte Carlo Analysis.
Keywords :
BiCMOS integrated circuits; Monte Carlo methods; circuit stability; low noise amplifiers; BiCMOS technology; Monte Carlo analysis; cascode configuration; circuit performance; circuit stability parameters; common source amplifier; current 9.9 mA; frequency 1.57542 GHz; low noise amplifier; narrowband input matching; noise figure 2.035 dB; power consumption; process parameters; size 0.35 mum; source inductor degeneration; voltage 3.3 V; BiCMOS integrated circuits; Circuit noise; Energy consumption; Impedance matching; Inductors; Low-noise amplifiers; Narrowband; Noise figure; Performance gain; Voltage;
Conference_Titel :
Signals, Circuits and Systems, 2009. ISSCS 2009. International Symposium on
Conference_Location :
Iasi
Print_ISBN :
978-1-4244-3785-6
Electronic_ISBN :
978-1-4244-3786-3
DOI :
10.1109/ISSCS.2009.5206197
