Title :
Ka-band low loss and high power handling GaAs PIN diode MMIC phase shifter for reflected-type phased array systems
Author :
Takasu, H. ; Sadaki, F. ; Kawano, M. ; Kamihashi, S.
Author_Institution :
Solid-State Eng. Dept., Toshiba Corp., Kawasaki, Japan
Abstract :
This paper describes the design and performances of a GaAs PIN diode and a reflected-type MMIC phase shifter in Ka-band. With optimized geometries and fabrication process, the GaAs PIN diode has shown the highest fmax so far. Excellent performances of MMIC phase shifters have also been obtained.
Keywords :
III-V semiconductors; MIMIC; MMIC phase shifters; antenna phased arrays; gallium arsenide; millimetre wave antenna arrays; millimetre wave phase shifters; p-i-n diodes; III-V semiconductors; Ka-band; MMIC phase shifter; PIN diode; fabrication process; optimized geometries; power handling; reflected-type phased array systems; Electrodes; Equivalent circuits; Fabrication; Gallium arsenide; Geometry; MMICs; Millimeter wave technology; Phase shifters; Phased arrays; Solid state circuits;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779803
