Title :
Improvement of self-organized quantum wire structures formed in (GaP)n(InP)m superlattices by the growth on GaAs(011) substrate
Author :
Kim, S.J. ; Asahi, H. ; Takemoto, M. ; Asami, K. ; Gonda, S.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
Abstract :
Self-organized quantum wire (QWR) structures are formed by the gas source molecular beam epitaxy growth of (GaP)n(InP)m short period superlattices (n/m-SLs) on GaAs(011) substrate. Transmission electron microscopy observations show that the formed structures are elongated along the [011¯] direction with improved straightness and uniformity compared with those on GaAs(100). QWRs formed in (GaP)n(InP)m SL/In0.49Ga0.51P multilayers (n/m-SL/InGaP MTLs) by self-organization exhibit a strong polarization dependence of the photoluminescence (PL) emission intensity for the fixed incident beam polarization. Temperature insensitive variation of the PL peak energy is also observed in these self-organized QWR structures
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium compounds; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wires; semiconductor superlattices; transmission electron microscopy; (GaP)n(InP)m short period superlattice; GaAs; GaAs(011) substrate; GaP-InP; In0.49Ga0.51P; In0.49Ga0.51P multilayer; gas source molecular beam epitaxy; growth; photoluminescence emission intensity; polarization dependence; quantum wire; self-organization; transmission electron microscopy; Indium phosphide; Molecular beam epitaxial growth; Nonhomogeneous media; Photoluminescence; Polarization; Substrates; Superlattices; Temperature; Transmission electron microscopy; Wire;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600040
