Title :
An empirical-table based FET model
Author :
Angelov, I. ; Rorsman, N. ; Stenarson, J. ; Garcia, M. ; Zirath, H.
Author_Institution :
Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
A new large signal field effect transistor (FET) model combining empirical and table based models was developed and investigated experimentally. The Chalmers empirical model was used as a spline function for the table based model. Combining models improves accuracy and simplifies and speeds extraction. The procedure can be applied for other types of devices.
Keywords :
equivalent circuits; field effect transistors; semiconductor device models; Chalmers empirical model; HEMT; MESFET; MOSFET; empirical-table based FET model; field effect transistor model; large signal FET model; spline function; table based model; Breakdown voltage; Charge measurement; Current measurement; Equations; Equivalent circuits; FETs; Frequency measurement; Intrusion detection; Scattering parameters; Transconductance;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779816
