Title :
A numerical study of silicon opening process
Author :
Davaji, Benyamin ; Fathipour, Morteza ; Vadizadeh, Mehdi
Author_Institution :
South Tehran Branch, Islamic Azad Univ., Tehran, Iran
Abstract :
In this paper we review the operational principles of silicon opening switch (SOS) process the utilizing realistic physical models provided by a commercial TCAD tool. We discusses qualitatively the difference between silicon opening process and conventional junction recovery mode. We show that p-n junction has no effect on current interruption.
Keywords :
p-n junctions; silicon; technology CAD (electronics); commercial TCAD tool; conventional junction recovery mode; current interruption; p-n junction; realistic physical models; silicon opening switch process; Capacitors; Electronics industry; Industrial relations; P-n junctions; Plasmas; Power semiconductor switches; Pulse generation; Pulse power systems; Semiconductor diodes; Silicon;
Conference_Titel :
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-4952-1
Electronic_ISBN :
978-1-4244-4952-1
DOI :
10.1109/ASQED.2009.5206236
