Leakage current detection in InGaAsP laser diodes by imaging of the optical emission within the confining InP layers

Author

Massetti, S. ; Cappa, V. ; Neitzert, H.C.

Author_Institution

CSELT, Torino, Italy

fYear

1997

fDate

11-15 May 1997

Firstpage

111

Lastpage

114

Abstract

The optical emission at 950 nm due to charge carrier recombination within the confining InP layers has been measured for buried heterostructure and ridge waveguide 1300 nm InGaAsP Multi Quantum Well Fabry-Perot laser diodes as a function of the temperature and of the injected current. Above laser threshold, this emission does only weakly depend on laser current for the ridge waveguide type while it increases exponentially with injection current in the case of Double Channel Planar Buried Heterostructure and Facet Selective Buried Heterostructure laser diodes. At high current densities, the 950 nm emission is mainly due to lateral leakage currents. For buried heterostructure laser diodes, a direct correlation has been found between the sublinearity of the optical emission vs. laser current characteristics and the integral of the InP emission. Second harmonic generation with a conversion efficiency below 10^-9 has been observed

Keywords

III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; laser variables measurement; leakage currents; quantum well lasers; 1300 nm; 950 nm; InGaAsP multi quantum well Fabry-Perot laser diode; InGaAsP-InP; charge carrier recombination; confining InP layer; conversion efficiency; double channel planar buried heterostructure; facet selective buried heterostructure; leakage current detection; optical emission imaging; ridge waveguide; second harmonic generation; Diode lasers; Indium phosphide; Leak detection; Leakage current; Nonlinear optics; Optical harmonic generation; Optical waveguides; Quantum well lasers; Stimulated emission; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600043

Filename

600043