DocumentCode
2996231
Title
Improved `dynamic random access memory´ prediction improves design decisions
Author
Kaminski, Lee ; Bridgers, Gene
Author_Institution
Symbolics Inc., Cambridge, MA, USA
fYear
1988
fDate
26-28 Jan 1988
Firstpage
364
Lastpage
372
Abstract
A method of reliability prediction is discussed that provides a means to quantify design tradeoffs for memory systems comprised of dynamic random-access memories (DRAMs). This method, the NEW-NEW method, builds on earlier work that has predicted the reliability of narrow, specific classes of memory systems, such as systems without error detection and correction. The NEW-NEW approach provides memory reliability analysis of a wider spectrum of memory systems, and can serve as the framework for future memory evaluation as DRAMs evolve and their behaviour becomes better understood
Keywords
circuit reliability; design engineering; random-access storage; DRAMs; design decisions; dynamic random-access memories; error correction; error detection; memory evaluation; memory systems; reliability analysis; reliability prediction; DRAM chips; Educational institutions; Educational programs; Error correction; Hardware; Mathematics; Military computing; Plastics; Random access memory; Reliability theory;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability and Maintainability Symposium, 1988. Proceedings., Annual
Conference_Location
Los Angeles, CA
Type
conf
DOI
10.1109/ARMS.1988.196477
Filename
196477
Link To Document