Title :
Effect of local random variation on gate-level delay and leakage statistical analysis
Author :
Kim, Jae Hoon ; Wook Kim ; Kim, Young Hwan
Author_Institution :
Div. of Electr. & Comput. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
In this paper, we analyzes the error due to the effects of local random variation on delay and leakage in the gate level statistical modeling. In experiments with various gates, without considering the local random variation showed over 20% of maximum error on the gate delay standard deviation, when compared with the results considering the local random variation. Moreover, in the aspect of leakage, without considering the local random variation causes maximum 10% of mean leakage error and over 300% of standard deviation error, when compared with the results considering the local random variation. Since conventional gate-level statistical model does not consider the local random variation, large local random variation may cause the significant error. Therefore, novel gate-level statistical modeling method considering the local random variation is required.
Keywords :
delays; logic gates; network analysis; statistical analysis; gate-level delay; leakage statistical analysis; local random variation; mean leakage error; Delay effects; Error analysis; Impurities; MOSFETs; Performance analysis; Resource description framework; Semiconductor process modeling; Statistical analysis; Threshold voltage; Timing;
Conference_Titel :
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-4952-1
Electronic_ISBN :
978-1-4244-4952-1
DOI :
10.1109/ASQED.2009.5206258