• DocumentCode
    2996608
  • Title

    Indium phosphide, indium-gallium-arsenide and indium-gallium-antimonide based high efficiency multijunction photovoltaics for solar energy harvesting

  • Author

    Bhattacharya, Indranil ; Foo, Simon Y.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Florida State Univ., Tallahassee, FL, USA
  • fYear
    2009
  • fDate
    15-16 July 2009
  • Firstpage
    237
  • Lastpage
    241
  • Abstract
    Multijunction solar cells direct sunlight towards matched spectral sensitivity by splitting the spectrum into smaller slices. The main challenge in the photovoltaic industry is to make the modules more cost effective. The high efficiency multijunction photovoltaics have played a very significant role in reducing the cost through concentrator photovoltaic systems being implemented around the world. For example National Renewable Energy Laboratory (NREL) and US Department of Energy (DOE) have funded several III-IV multijunction solar cell projects. In this paper we have introduced a new multijunction photovoltaic cell based upon InP/InGaAs/InGaSb, and performed a comparison of solar energy absorption, reflection and transmission with existing single-junction and multijunction cells being deployed around the world. The inclusion of InGaSb layer in the design has made a significant difference in absorption in the spectral range of 598 nm-800 nm, contributing to a higher efficiency of the solar cell.
  • Keywords
    energy harvesting; gallium arsenide; indium compounds; solar cells; InGaAs; InGaSb; InP; concentrator photovoltaic systems; indium phosphide; indium-gallium-antimonide; indium-gallium-arsenide; multijunction photovoltaics; multijunction solar cells; solar energy harvesting; Absorption; Costs; Indium gallium arsenide; Indium phosphide; Laboratories; Photovoltaic cells; Photovoltaic systems; Renewable energy resources; Solar energy; US Department of Energy; InP/InGaAs/InGaSb; Multijunction; Photovoltaic; Single-junction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4244-4952-1
  • Electronic_ISBN
    978-1-4244-4952-1
  • Type

    conf

  • DOI
    10.1109/ASQED.2009.5206262
  • Filename
    5206262