DocumentCode :
2996750
Title :
Area-effective programmable FSM-based MBIST for synchronous SRAM
Author :
Noor, Nur Qamarina Mohd ; Saparon, Azilah ; Yusof, Yusrina ; Adnan, Mahmud
Author_Institution :
Univ. Teknol. MARA, Malaysia
fYear :
2009
fDate :
15-16 July 2009
Firstpage :
203
Lastpage :
207
Abstract :
As the memory enters submicron technology, new test algorithms that are able to give a better fault coverage such as to detect single-cell fault and all intra-word coupling fault (CF) have been widely developed. In order to implement this algorithm to the memory, test techniques such as BIST are utilized. Common types of programmable memory built-in-self tests (PMBIST) are microcode-based PMBIST and FSM-based PMBIST. The popular approaches of designing various kinds of PMBIST architectures are either by targeting to reach specific testing requirement such as full speed and at speed or by considering the cost-constraint and area overhead for low-cost or low-area design. In this paper, FSM-based BIST is designed to enable detecting both single-cell dynamic fault such as read destructive fault (RDF), deceptive read destructive fault (DRDF), and all intra-word coupling faults (CF) in a synchronous SRAM under low-area constraint of test requirement.
Keywords :
SRAM chips; computer equipment testing; fault diagnosis; finite state machines; FSM-based PMBIST; area overhead; area-effective programmable FSM; cost-constraint; deceptive read destructive fault; fault detection; finite state machine; intraword coupling fault; microcode-based PMBIST; programmable memory built-in-self test; read destructive fault; single-cell fault; synchronous SRAM; Built-in self-test; Circuit faults; Circuit testing; Counting circuits; Coupling circuits; Fault detection; Random access memory; Read only memory; Resource description framework; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-4952-1
Electronic_ISBN :
978-1-4244-4952-1
Type :
conf
DOI :
10.1109/ASQED.2009.5206271
Filename :
5206271
Link To Document :
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