• DocumentCode
    2996857
  • Title

    A 1-volt temperature sensor with duty-cycle-modulated output in 0.18 μm CMOS technology

  • Author

    Abdollahpour, M. ; Heidari, A.

  • Author_Institution
    Electr. Eng. Dept., Univ. of Guilan, Rasht, Iran
  • fYear
    2015
  • fDate
    10-14 May 2015
  • Firstpage
    1089
  • Lastpage
    1092
  • Abstract
    This paper describes the design of a low-voltage, energy-efficient smart temperature sensor to be implemented in 0.18μm standard CMOS technology. The BJT-based sensor converts the PTAT and CTAT currents to a square-wave output with a duty cycle proportional to the temperature. The main limitations of the integrated interface for low-voltage design is found from an approximating analytical calculation, which shows that the minimum supply voltage was 1.5 V. Next, the design was modified to make our principle working for a 1V supply. Simulation results of the complete sensor show that the error in temperature range of -40°C to 110°C is less than 0.5°C. However, due to the influence of leakage currents, this error rises to about 3°C for 130°C.
  • Keywords
    CMOS integrated circuits; bipolar transistors; intelligent sensors; leakage currents; low-power electronics; temperature sensors; BJT-based sensor; CMOS technology; duty-cycle-modulated output; energy-efficient smart temperature sensor; leakage currents; low-voltage temperature sensor; size 0.18 mum; temperature -40 degC to 110 degC; voltage 1 V; Conferences; Decision support systems; Electrical engineering; Hafnium; duty cycle; low-voltage design; smart temperature sensor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
  • Conference_Location
    Tehran
  • Print_ISBN
    978-1-4799-1971-0
  • Type

    conf

  • DOI
    10.1109/IranianCEE.2015.7146374
  • Filename
    7146374