Title :
A 1-volt temperature sensor with duty-cycle-modulated output in 0.18 μm CMOS technology
Author :
Abdollahpour, M. ; Heidari, A.
Author_Institution :
Electr. Eng. Dept., Univ. of Guilan, Rasht, Iran
Abstract :
This paper describes the design of a low-voltage, energy-efficient smart temperature sensor to be implemented in 0.18μm standard CMOS technology. The BJT-based sensor converts the PTAT and CTAT currents to a square-wave output with a duty cycle proportional to the temperature. The main limitations of the integrated interface for low-voltage design is found from an approximating analytical calculation, which shows that the minimum supply voltage was 1.5 V. Next, the design was modified to make our principle working for a 1V supply. Simulation results of the complete sensor show that the error in temperature range of -40°C to 110°C is less than 0.5°C. However, due to the influence of leakage currents, this error rises to about 3°C for 130°C.
Keywords :
CMOS integrated circuits; bipolar transistors; intelligent sensors; leakage currents; low-power electronics; temperature sensors; BJT-based sensor; CMOS technology; duty-cycle-modulated output; energy-efficient smart temperature sensor; leakage currents; low-voltage temperature sensor; size 0.18 mum; temperature -40 degC to 110 degC; voltage 1 V; Conferences; Decision support systems; Electrical engineering; Hafnium; duty cycle; low-voltage design; smart temperature sensor;
Conference_Titel :
Electrical Engineering (ICEE), 2015 23rd Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4799-1971-0
DOI :
10.1109/IranianCEE.2015.7146374