• DocumentCode
    2996964
  • Title

    New challenges on leakage current improvement in tunnel FET by using low-k oxide

  • Author

    Vadizadeh, Mahdi ; Davaji, Benyamin ; Fathipour, Morteza

  • Author_Institution
    Dept of Electr. & Comput. Eng., Univ. of Tehran, Tehran, Iran
  • fYear
    2009
  • fDate
    15-16 July 2009
  • Firstpage
    136
  • Lastpage
    139
  • Abstract
    In this paper, we have shown that off-state current in the Tunneling Field Effect Transistor (TFET) can be reduced dramatically by using a low-k oxide and employing gate work function engineering. In order to enhance Ion/Ioff ratio in the TFET, the effect of second gate employing has been investigated, hence using a low-k oxide for the gate near the drain side (Gate2) resulted in omission of fringing field effects. Therefore, the leakage current is decreased. Also a work function engineering method has been employed for the gate near the source (Gate1) to further reduce the off state current.
  • Keywords
    field effect transistors; tunnel transistors; leakage current; low-k oxide; tunnel FET; tunneling field effect transistor; Analytical models; CMOS technology; Electrons; FETs; Leakage current; MOSFET circuits; P-i-n diodes; Temperature; Tunneling; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4244-4952-1
  • Electronic_ISBN
    978-1-4244-4952-1
  • Type

    conf

  • DOI
    10.1109/ASQED.2009.5206282
  • Filename
    5206282
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2996964