A sub-1V nanowatt CMOS bandgap voltage reference with temperature coefficient of 13ppm/°C

Author

Fakharyan, Iman ; Ehsanian, Mehdi

Author_Institution

Res. Lab. for High Freq. Circuits & Syst., K. N. Toosi Univ. of Technol., Tehran, Iran

fYear

2015

fDate

10-14 May 2015

Firstpage

1129

Lastpage

1132

Abstract

In this work, a fully-MOSFET nanowatt bandgap voltage reference (BVR) is presented. Biased in weak-inversion region, self-cascade composite transistors have been used in the proposed BVR. The circuit has been designed and simulated in 0.18-μm standard CMOS technology. The simulation results show that the proposed BVR circuit generates a reference voltage of 630mV, obtaining temperature coefficient of 13 ppm/°C in the temperature range of -25°C to 110°C. The circuit draws 18nA from a 0.9-V supply.

Keywords

CMOS integrated circuits; low-power electronics; nanoelectronics; reference circuits; fully-MOSFET nanowatt BVR; nanowatt CMOS bandgap voltage reference; self-cascade composite transistor; size 0.18 mum; standard CMOS technology; temperature -25 C to 110 C; temperature coefficient; voltage 0.9 V; voltage 630 mV; weak-inversion region; Conferences; Decision support systems; Electrical engineering; Bandgap voltage reference; Low voltage; Nanowatt; Reference circuit; Resistorless; Subthreshold;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2015 23rd Iranian Conference on

Conference_Location

Tehran

Print_ISBN

978-1-4799-1971-0

Type

conf

DOI

10.1109/IranianCEE.2015.7146382

Filename

7146382