Title :
Heavy-hole effective mass and valence-band offset estimated by confined states in In0.53Ga0.47As/In0.52Al0.48 As multi-quantum well structures
Author :
Tanaka, K. ; Kotera, N. ; Nakamura, H.
Author_Institution :
Dept. of Comput. Sci. & Electron., Kyushu Inst. of Technol., Fukuoka, Japan
Abstract :
Interband optical transitions of In0.53Ga0.47As/In0.52Al0.48 As multi-quantum well structures were observed at room temperature in photocurrent spectra under applied bias voltages. Photocurrent spectra had steplike structures and excitonic resonance peaks corresponding to confined states in quantum wells. A heavy-hole effective mass and a valence-band offset were estimated to be 0.39 m0 and 0.22 eV by departure from the square-law dependence of confinement energies on heavy-hole quantum numbers
Keywords :
III-V semiconductors; aluminium compounds; effective mass; excitons; gallium arsenide; indium compounds; interface states; photoconductivity; semiconductor quantum wells; valence bands; visible spectra; In0.53Ga0.47As-In0.52Al0.48 As; In0.53Ga0.47As/In0.52Al0.48 As multi-quantum well structures; applied bias voltages; confined states; confinement energies; excitonic resonance peaks; heavy-hole effective mass; heavy-hole quantum numbers; interband optical transitions; photocurrent spectra; room temperature; square-law dependence; steplike structures; valence-band offset; Absorption; Indium compounds; Indium gallium arsenide; Indium phosphide; Photoconductivity; Quantum well devices; Resonance; State estimation; Temperature; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600047
