Title :
Ground bouncing noise suppression techniques for MTCMOS circuits
Author :
Jiao, Hailong ; Kursun, Volkan
Author_Institution :
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
Ground bouncing noise produced during the sleep to active mode transitions is an important challenge in multithreshold CMOS (MTCMOS) circuits. The effectiveness of different noise-aware MTCMOS circuit techniques to deal with the ground bouncing noise phenomenon is evaluated in this paper. An intermediate relaxation mode is investigated to gradually dump the charge stored on the virtual ground line to the real ground distribution network during the sleep to active mode transitions. The peak amplitude of the ground bouncing noise is reduced by up to 69.17% with the noise-aware MTCMOS circuits without sacrificing the savings in leakage power consumption as compared to the standard MTCMOS circuits in a 90 nm CMOS technology.
Keywords :
CMOS integrated circuits; integrated circuit noise; CMOS technology; MTCMOS circuits; active mode transitions; ground bouncing noise suppression; ground distribution network; multithreshold CMOS circuits; noise-aware MTCMOS circuit; size 90 nm; Active noise reduction; CMOS technology; Circuit noise; Energy consumption; Integrated circuit noise; MOSFETs; Noise generators; Noise reduction; Subthreshold current; Threshold voltage;
Conference_Titel :
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-4952-1
Electronic_ISBN :
978-1-4244-4952-1
DOI :
10.1109/ASQED.2009.5206297
