Title :
Analytical modeling of Hot Carrier Injection induced degradation in triple gate bulk FinFETs
Author :
Ghobadi, Nayereh ; Afzali-Kusha, Ali ; Asl-Soleimani, Ebrahim
Author_Institution :
Nanoelectron. Center of Excellence, Univ. of Tehran, Tehran, Iran
Abstract :
In this paper, an analytical model for the HCI induced trap generation in the gate oxide and the degradation of a triple gate bulk FinFET is presented. The model which is obtained by solving the reaction-diffusion equations multi-dimensionally, includes the geometry dependence of the time-exponent of HCI degradation of the structure. In this framework, the electric field distribution and the maximum lateral electric field near the drain region are obtained through solving the Poisson´s equation in the saturation region near the drain. Also, the nth power law MOS model is used to model the saturation current and its degradation. The accuracy of the HCI model is verified using experimental results.
Keywords :
MOSFET; Poisson equation; hot carriers; reaction-diffusion systems; HCI induced trap generation; Poisson equation; analytical modeling; electric field distribution; gate oxide; geometry dependence; hot carrier injection induced degradation; maximum lateral electric field; nth power law MOS model; reaction-diffusion equation; saturation region; triple gate bulk FinFET; Analytical models; Degradation; Electrons; Equations; FinFETs; Geometry; Hot carrier injection; Human computer interaction; Impact ionization; MOSFET circuits; Analytical Modeling; Hot Carrier Injection; Reaction-Diffusion (R-D) model; Triple Gate Bulk FinFET;
Conference_Titel :
Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-4952-1
Electronic_ISBN :
978-1-4244-4952-1
DOI :
10.1109/ASQED.2009.5206302