• DocumentCode
    2997426
  • Title

    A novel 4H-SiC UMOSFET_ACCUFET with large blocking voltage

  • Author

    Peyvast, Negin ; Fathipour, Morteza

  • Author_Institution
    Device & Process Modeling & Simulation Lab., Univ. of Tehran, Tehran, Iran
  • fYear
    2009
  • fDate
    15-16 July 2009
  • Firstpage
    35
  • Lastpage
    38
  • Abstract
    In this paper, a new structure for a power UMOSFET_ACCUFET, based-on 4H-SiC, has been represented. We have demonstrated that by using vertical P and N pillars under the trench of a conventional UMOSFET, a superior characteristic for this device is achieved. The structure may be optimized by appropriate choice of N and P pillar´s doping concentrations as well as widths.
  • Keywords
    power MOSFET; semiconductor doping; silicon compounds; wide band gap semiconductors; SiC; large-blocking voltage; power UMOSFET-ACCUFET; vertical N pillar doping concentration; vertical P pillar doping concentration; Computational modeling; Doping; Electric breakdown; Electric resistance; Electrons; Guidelines; MOSFET circuits; Protection; Thermal conductivity; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design, 2009. ASQED 2009. 1st Asia Symposium on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4244-4952-1
  • Electronic_ISBN
    978-1-4244-4952-1
  • Type

    conf

  • DOI
    10.1109/ASQED.2009.5206303
  • Filename
    5206303
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2997426