مرکز منطقه ای اطلاع رساني علوم و فناوري

Keywords :

CMOS integrated circuits; MOSFET; carbon nanotubes; circuit simulation; dielectric devices; electric breakdown; heterojunction bipolar transistors; high electron mobility transistors; integrated circuit interconnections; integrated circuit manufacture; integrated circuit reliability; integrated memory circuits; integrated optoelectronics; logic circuits; micromechanical devices; microwave devices; nanoelectronics; power electronics; quantum optics; semiconductor device manufacture; semiconductor device models; semiconductor device reliability; semiconductor materials; semiconductor process modelling; sensors; single electron devices; thin film transistors; tunnelling; CMOS circuits; CMOS devices; HBTs; HEMTs; MEMS applications; MEMS technologies; MOSFETs; RF devices; carbon nanotubes; circuit manufacturing; circuit reliability; device manufacturing; device reliability; dielectric devices; gate dielectric breakdown; interconnect technologies; interface properties; logic circuits; materials properties; memory circuits; metal gate process technology; nano-computing devices; nanoelectronics; nanoscale technologies; optoelectronic devices; passive components; power devices; process modeling; quantum electronics; semiconductor circuit technology; semiconductor device modeling; semiconductor device technology; semiconductor materials; sensors; single electronics; solid state devices; thin film transistors; tunneling devices;