Title :
Single Si3N4 layer on dual substrate for pH sensing micro sensor
Author :
Wang, Szu-Chieh ; Lai, Chao-Sung ; Lue, Cheng-En ; Yang, Chia-Ming
Author_Institution :
Dept. of Electron. Eng., Chang-Gung Univ., Taoyuan
Abstract :
In this study, a novel approach for realization of an inorganic ISFET/REFET system was presented. Single Si3N4 layer was used as the sensing membrane of EIS structure directly on n and p type substrate. The differential pH sensitivity of them is 25.1 mV/pH, and the linearity is higher than 99%. The drift effect for the single Si3N4 EIS structures could be minimized to around 1 mV/h by this differential arrangement. Besides, light and hysteresis effect for both conditions were investigated.
Keywords :
chemical sensors; ion sensitive field effect transistors; membranes; microsensors; silicon compounds; EIS structure; Si3N4; dual substrate; hysteresis effect; inorganic ISFET/REFET system; ion sensitive field effect transistor; microsensor; pH sensing; reference field effect transistor; Biomembranes; Biosensors; Capacitance-voltage characteristics; Electrodes; FETs; Fabrication; Hysteresis; Sensor systems; Silicon; Stability;
Conference_Titel :
Sensors Applications Symposium, 2009. SAS 2009. IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
978-1-4244-2786-4
Electronic_ISBN :
978-1-4244-2787-1
DOI :
10.1109/SAS.2009.4801778
