Single Si3N4 layer on dual substrate for pH sensing micro sensor

Author

Wang, Szu-Chieh ; Lai, Chao-Sung ; Lue, Cheng-En ; Yang, Chia-Ming

Author_Institution

Dept. of Electron. Eng., Chang-Gung Univ., Taoyuan

fYear

2009

fDate

17-19 Feb. 2009

Firstpage

61

Lastpage

64

Abstract

In this study, a novel approach for realization of an inorganic ISFET/REFET system was presented. Single Si₃N₄ layer was used as the sensing membrane of EIS structure directly on n and p type substrate. The differential pH sensitivity of them is 25.1 mV/pH, and the linearity is higher than 99%. The drift effect for the single Si₃N₄ EIS structures could be minimized to around 1 mV/h by this differential arrangement. Besides, light and hysteresis effect for both conditions were investigated.

Keywords

chemical sensors; ion sensitive field effect transistors; membranes; microsensors; silicon compounds; EIS structure; Si₃N₄; dual substrate; hysteresis effect; inorganic ISFET/REFET system; ion sensitive field effect transistor; microsensor; pH sensing; reference field effect transistor; Biomembranes; Biosensors; Capacitance-voltage characteristics; Electrodes; FETs; Fabrication; Hysteresis; Sensor systems; Silicon; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors Applications Symposium, 2009. SAS 2009. IEEE

Conference_Location

New Orleans, LA

Print_ISBN

978-1-4244-2786-4

Electronic_ISBN

978-1-4244-2787-1

Type

conf

DOI

10.1109/SAS.2009.4801778

Filename

4801778