DocumentCode
2997958
Title
Photoluminescent porous polycrystalline silicon
Author
Han, P.G. ; Poon, M.C. ; Sin, K.O. ; Wong, M.
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clearwater Bay, Hong Kong
fYear
1995
fDate
34881
Firstpage
2
Lastpage
5
Abstract
Recently, visible photoluminescence (PL) has been observed in porous Si layers formed by anodized or stain-etched polycrystalline Si. The new luminescent porous poly-Si (PPS) films can be formed on glass substrates or integrated into parts of Si ICc, hence opening up numerous novel opto-electronic device designs and applications. In this paper present new results on the effect of etching conditions and XRD peaks on PL emission from PPS films. Possible explanations and models, including preliminary studies on PPS formation kinetics, are also proposed and discussed
Keywords
X-ray diffraction; elemental semiconductors; etching; photoluminescence; porous materials; semiconductor thin films; silicon; PPS film; Si; XRD; kinetics; porous polycrystalline silicon; stain etching; visible photoluminescence; Etching; Integrated circuit technology; Oxidation; Passivation; Photoluminescence; Semiconductor films; Silicon compounds; Substrates; X-ray lasers; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995., Proceedings 1995 IEEE Hong Kong
Print_ISBN
0-7803-2919-8
Type
conf
DOI
10.1109/HKEDM.1995.520633
Filename
520633
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