Title :
Dielectric film deposition by atmospheric pressure and low temperature CVD using TEOS, ozone, and new organometallic doping sources
Author :
Nishimoto, Y. ; Tokumasu, N. ; Fujino, K. ; Maeda, K.
Author_Institution :
Semicond. Process Lab. Co., Ltd., Tokyo, Japan
Abstract :
An atmospheric-pressure CVD technology using TEOS, ozone, and new organometallic doping sources, such as tris(trimethylsilil)borate, ((CH 3)3SiO)3B, is described. This technology offers excellent dielectric films with respect to step coverage, film stress, moisture resistance, and thermal flow characteristics. Nondoped silicon dioxide and BSG films are deposited to cover conformably even a deeply trenched substrate. They can be used as a dielectric film between a polysilicon and an aluminum layer or between aluminum layers without any planarization process. BPSG films showed good step coverage, and could be smoothly reflowed at a low temperature
Keywords :
VLSI; boron compounds; chemical vapour deposition; dielectric thin films; glass; metallisation; silicon compounds; APCVD; B2O3-P2O5-SiO2; B2O3-SiO2; BPSG films; BSG films; TEOS; VLSI; atmospheric-pressure CVD; deeply trenched substrate; dielectric films; film stress; low temperature CVD; moisture resistance; multilevel interconnection; organometallic doping sources; smoothly reflowed; step coverage; thermal flow characteristics; tris(trimethylsilil)borate; Aluminum; Dielectric films; Dielectric substrates; Doping; Moisture; Planarization; Semiconductor films; Silicon compounds; Thermal resistance; Thermal stresses;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1989.77998
