Fully integrated CMOS and high voltage compatible RF MEMS technology

Author

Guan, Lingpeng ; Sin, Johnny K O ; Liu, Haitao ; Xiong, Zhibin

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

35

Lastpage

38

Abstract

In this paper, a fully integrated CMOS and high voltage compatible RF MEMS (radio frequency microelectromechanical systems) technology is proposed and demonstrated for the first time. The high performance RF MEMS switch, high voltage MOSFET, and CMOS devices are all obtained using a simple process. The fabricated high voltage device has a breakdown voltage of over 35V. The MEMS capacitive switch fabricated on a high resistivity SOI substrate and with high-k dielectric (HfO₂) exhibits a low insertion loss (0.14dB at 5GHz) and a good isolation (9.5dB at 5GHz). This technology demonstrates the feasibility of building fully integrated RF systems for wireless communication applications.

Keywords

CMOS integrated circuits; MOSFET; hafnium compounds; microswitches; microwave devices; power semiconductor devices; radio equipment; silicon-on-insulator; 0.14 dB; 5 GHz; CMOS devices; HfO₂; MEMS capacitive switch; RF MEMS technology; Si; breakdown voltage; fully integrated CMOS; high resistivity SOI substrate; high voltage MOSFET; high voltage compatibility; high voltage device; high-k dielectric; radio frequency microelectromechanical systems; Breakdown voltage; CMOS process; CMOS technology; Communication switching; Conductivity; Dielectric substrates; MOSFET circuits; Micromechanical devices; Radiofrequency microelectromechanical systems; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419057

Filename

1419057