DocumentCode :
29984
Title :
VDMOS electrical parameters potentially usable as mechanical state indicators for power VDMOS assemblies
Author :
Marcault, E. ; Bourennane, A. ; Tounsi, Patrick ; Breil, Marie ; Dorkel, Jean-Marie
Author_Institution :
LAAS, Toulouse, France
Volume :
8
Issue :
3
fYear :
2014
fDate :
May-14
Firstpage :
188
Lastpage :
196
Abstract :
Power device reliability is a multidisciplinary domain. It requires design and integration of sensors, implementation of signal processing algorithms that allow processing the different data provided by the different sensors in order to predict by statistical means the device failure occurrence and consequently anticipate the power device replacement. Currently, for device ageing studies in a laboratory, electrical measurements of device parameters are often used as an indicator of device ageing. Furthermore, smart metal-oxide semi-conductor technology integrates more and more sensors that permit to measure quantities such as on-state resistance or junction temperature of the device. In power vertical diffused metal oxide semiconductor (VDMOS) assemblies, it would be interesting to make use of the VDMOS electrical parameters deviations in order to monitor the ageing state of the power assembly. To that end, we carry-out in this paper a study mainly based upon electro-thermo-mechanical simulations in order to identify the power VDMOS electrical parameters that could be monitored in order to access to the mechanical state of the power assembly and therefore anticipate the assembly failure. The power VDMOS Ron as well as zero temperature coefficient (ZTC) point are of interest because they are sensitive to mechanical stress. Consequently, in this paper, a procedure to minimise temperature impact on the Ron of the VDMOS transistor such that one could use the Ron as mechanical state indicator is shown. Another solution that makes use of a specific operating point of VDMOS (ZTC) which is temperature independent is also studied by simulations and experiment.
Keywords :
ageing; power MOSFET; semiconductor device reliability; VDMOS electrical parameters deviations; VDMOS transistor; ZTC point; ageing state; assembly failure; device ageing; device failure occurrence; device parameters; electrical measurements; electrothermomechanical simulations; mechanical state indicator; mechanical stress; power VDMOS assemblies; power assembly; power device reliability; power device replacement; smart metal-oxide semi-conductor technology; specific operating point; statistical means; temperature impact; zero temperature coefficient point;
fLanguage :
English
Journal_Title :
Circuits, Devices & Systems, IET
Publisher :
iet
ISSN :
1751-858X
Type :
jour
DOI :
10.1049/iet-cds.2013.0231
Filename :
6824026
Link To Document :
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