A mechanically enhanced storage node for virtually unlimited height (MESH) capacitor aiming at sub 70nm DRAMs

Author

Kim, D.H. ; Kim, Jin Young ; Huh, M. ; Hwang, Yoon Sung ; Park, J.M. ; Han, D.H. ; Kim, Dong In ; Cho, M.H. ; Lee, B.H. ; Hwang, H.K. ; Song, J.W. ; Kang, N.J. ; Ha, G.W. ; Song, S.S. ; Shim, M.S. ; Kim, S.E. ; Kwon, J.M. ; Park, Bong Joo ; Oh, H.J. ; Kim

Author_Institution

Semicond. R & D Div., Samsung Electron. Co., Yongin, South Korea

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

69

Lastpage

72

Abstract

Fully reliable lean-free stacked capacitor, with the meshes of the supporter made of Si₃N₄, has been successfully developed on 80nm COB DRAM application. This novel process terminates persistent problems caused by mechanical instability of storage node with high aspect ratio. With Mechanically Enhanced Storage node for virtually unlimited Height (MESH), the cell capacitance over 30fF/cell has been obtained by using conventional MIS dielectric with an equivalent 2.3nm oxide thickness. This inherently lean-free capacitor makes it possible extending the existing MIS dielectric technology to sub-70nm OCS (one cylindrical storage node) DRAMs.

Keywords

DRAM chips; 2.3 nm; 80 nm; COB DRAM; MESH capacitor; MIS dielectric technology; Si₃N₄; mechanical instability; one cylindrical storage node DRAM; stacked capacitor; virtually unlimited height; Bridge circuits; Capacitance; Capacitors; Dielectric materials; Glass; Manufacturing processes; Random access memory; Semiconductor device manufacture; Strips; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419067

Filename

1419067