Title :
Mechanism of negative bias temperature instability in CMOS devices: degradation, recovery and impact of nitrogen
Author :
Mahapatra, S. ; Kumar, P. Bharath ; Dalei, T.R. ; Sana, D. ; Alam, M.A.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Bombay, India
Abstract :
NBTI mechanism is discussed for a wide range of stress conditions. Conditions for interface and bulk-trap generation are shown. The bias, time and temperature dependence of interface-trap buildup and recovery are discussed using the framework of the R-D model. The AC frequency dependence and impact of gate oxide nitridation are also discussed.
Keywords :
CMOS integrated circuits; electron traps; integrated circuit reliability; interface phenomena; nitridation; AC frequency dependence; CMOS devices; R-D model; bulk-trap generation; gate oxide nitridation; interface conditions; interface-trap buildup; interface-trap recovery; negative bias temperature instability; stress conditions; Degradation; Hot carriers; Impact ionization; Negative bias temperature instability; Niobium compounds; Nitrogen; Pulse measurements; Stress; Temperature dependence; Titanium compounds;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419079
