Characterization of G-R noise in GaAs/AlGaAs based double barrier resonant tunneling diodes

Author

Surya, Charles

Author_Institution

Dept. of Electron. Eng., Hong Kong Polytech. Univ., Kowloon, Hong Kong

fYear

1995

fDate

34881

Firstpage

24

Lastpage

29

Abstract

In this paper we report studies on the origin of low-frequency excess noise in GaAs/Al_0.4Ga_0.6As double barrier resonant tunneleing diodes (RTDs). The RTDs were grown by molecular-beam epitaxy (MBE) on n⁺ (100) GaAs substrates. The double-barrier structure consists of 32-Å-thick Al_0.4Ga_0.6As barriers and a 48-Å-thick GaAs quantum well. The band discontinuity is about 0.325 eV. The background impurity concentration in the double-barrier structure is approximately 10¹⁵ cm^-3

Keywords

III-V semiconductors; aluminium compounds; characteristics measurement; gallium arsenide; impurity distribution; molecular beam epitaxial growth; resonant tunnelling diodes; semiconductor device noise; semiconductor epitaxial layers; semiconductor growth; 0.325 eV; G-R noise; GaAs-AlGaAs; background impurity concentration; band discontinuity; double barrier resonant tunneling diodes; low-frequency excess noise; molecular-beam epitaxy; Acoustical engineering; Diodes; Fluctuations; Fluid flow; Gallium arsenide; Impurities; Noise shaping; Packaging; Resonance; Resonant tunneling devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995., Proceedings 1995 IEEE Hong Kong

Print_ISBN

0-7803-2919-8

Type

conf

DOI

10.1109/HKEDM.1995.520638

Filename

520638