Title :
A geometrical unification of the theories of NBTI and HCI time-exponents and its implications for ultra-scaled planar and surround-gate MOSFETs
Author :
Kufluoglu, Haldun ; Alam, Muhammad Ashraful
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
A unification of time-exponents for negative bias temperature instability (NBTI) and hot carrier injection (HCI) is established under the geometric interpretation of interface trap generation. Resolving the fundamental inconsistencies, a numerical reaction-diffusion (R-D) model that agrees with recent measurements is developed. The implications regarding the degradations of future sub-100 nm planar and surround-gate MOSFETs are presented.
Keywords :
MOSFET; hot carriers; integrated circuit modelling; interface states; 100 nm; HCI time exponents; geometrical unification; hot carrier injection; interface trap generation; negative bias temperature instability; numerical reaction-diffusion model; surround-gate MOSFET; ultra-scaled planar MOSFET; Computer interfaces; Degradation; Geometry; Hot carrier injection; Human computer interaction; Hydrogen; MOSFETs; Niobium compounds; Solid modeling; Titanium compounds;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419081
