• DocumentCode
    2998878
  • Title

    Influence of nitrogen in ultra-thin SiON on negative bias temperature instability under AC stress

  • Author

    Mitani, Yuichiro

  • Author_Institution
    Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
  • fYear
    2004
  • fDate
    13-15 Dec. 2004
  • Firstpage
    117
  • Lastpage
    120
  • Abstract
    In order to clarify the effect of nitrogen incorporation on negative bias temperature instability (NBTI), VTH degradations and its recoveries for NO-SiON and N-plasma SiON has been investigated. As a result, recovery of NBT degradation is more difficult for N-plasma SiON than for NO-SiON. This result indicates that nitrogen atoms have an effect on the "lock-in" of hydrogen or hydrogen-related species. Furthermore, on the basis of the analysis of ΔVTH under DC stress, we also tried to predict the NBT degradation under AC stress.
  • Keywords
    integrated circuit reliability; nitridation; silicon compounds; stress effects; AC stress; N-plasma SiON; NBT degradation; SiON; hydrogen-related species; negative bias temperature instability; nitrogen atoms; nitrogen incorporation; ultra-thin SiON; Degradation; Hydrogen; Large scale integration; Negative bias temperature instability; Niobium compounds; Nitrogen; Plasma devices; Plasma simulation; Stress; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-8684-1
  • Type

    conf

  • DOI
    10.1109/IEDM.2004.1419082
  • Filename
    1419082
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2998878