Title :
Directional deposition of dielectric silicon oxide by plasma enhanced TEOS process
Author :
Hsieh, J.J. ; Ibbotson, D.E. ; Mucha, J.A. ; Flamm, D.L.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
A description is given of the deposition of dielectric silicon oxide from TEOS in helium/oxygen mixtures in a parallel-plate RF plasma reactor. Under appropriate process conditions, highly directional deposition of low-stress stoichiometric silicon oxide is achieved. The step coverage profiles and the chemical and physical properties of these SiO2 films were studied to gain an understanding of the origin of preferentially vertical deposition. The typical deposition conditions used in this study were 1 torr total pressure, 320°C substrate temperature, 1-40% TEOS, and 0-80% O2 in low-power-density (0.1-0.4 W/cm2) 14 MHz RF discharges. Step coverage, chemical stability and film stress were found to be most dependent on the O2:TEOS gas flow ratio. This dependence can be explained by the various effects involved in the oxide deposition mechanism
Keywords :
VLSI; chemical vapour deposition; dielectric thin films; metallisation; silicon compounds; 1 torr; 14 MHz; 320 C; PECVD; SiO2 films; VLSI; chemical stability; deposition conditions; directional deposition; film stress; gas flow ratio; low stress films; multilevel interconnection; oxide deposition mechanism; parallel-plate RF plasma reactor; physical properties; plasma enhanced TEOS process; process conditions; step coverage; substrate temperature; total pressure; vertical deposition; Chemicals; Dielectrics; Helium; Inductors; Plasma chemistry; Plasma properties; Plasma temperature; Radio frequency; Silicon; Substrates;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1989.78002
