Title :
Quantum mechanical calculation of hole mobility in silicon inversion layers under arbitrary stress
Author :
Wang, E. ; Matagne, P. ; Shifren, L. ; Obradovic, B. ; Kotlyar, R. ; Cea, S. ; He, J. ; Ma, Z. ; Nagisetty, R. ; Tyagi, S. ; Stettler, M. ; Giles, M.D.
Author_Institution :
TCAD Div., Intel Corp., Santa Clara, CA, USA
Abstract :
We have developed a quantum anisotropic transport model for holes which, for the first time, allows mobility to be studied under both uniaxial and arbitrary stress in PMOS inversion layers. The anisotropic bandstructure of a 2D quantum gas is computed from a 6-band stress dependent k.p Hamiltonian. Our unique momentum-dependent scattering model also captures the anisotropy of scattering. A comprehensive study has been performed for uniaxial stress, biaxial stress, and their nonlinear interactions. The results are compared with device bending data and piezoresistance data, showing very good agreement.
Keywords :
elemental semiconductors; hole mobility; inversion layers; silicon; stress effects; 2D quantum gas; arbitrary stress; biaxial stress; hole mobility; momentum-dependent scattering model; quantum mechanical calculation; silicon inversion layers; uniaxial stress; Acoustic scattering; Anisotropic magnetoresistance; Compressive stress; Optical scattering; Optical surface waves; Particle scattering; Phonons; Quantum computing; Quantum mechanics; Silicon;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419091
