Stress migration resistance of Al-Si-Pd alloy interconnects

Author

Koubuchi, Yasushi ; Onuki, Jin ; Suwa, Motoo ; Fukada, Sin-ichi

Author_Institution

Hitachi Ltd., Ibaraki, Japan

fYear

1989

fDate

12-13 Jun 1989

Firstpage

419

Lastpage

425

Abstract

Al-Si-Pd alloy with high stress-induced migration resistance was developed for VLSI interconnects. Pd was selected to depress grain boundary diffusion of Al alloys. The microstructures of Al matrices alloyed with Pd and Cu were investigated. The morphologies of precipitation in Al alloy conductors were examined after high-temperature heat treatment. The stress-induced migration resistances of the Al-Si-Pd and Al-Si-Cu were found to be influenced by the microstructures of Al matrices

Keywords

VLSI; aluminium alloys; grain boundary diffusion; heat treatment; integrated circuit technology; metallisation; palladium alloys; silicon alloys; stress effects; Al alloy conductors; Al matrices; Al-Si-Pd alloy interconnects; AlSiCu; AlSiPd; VLSI interconnects; diffusion depression; grain boundary diffusion; high-temperature heat treatment; metallisation; microstructures; precipitation morphologies; stress-induced migration resistance; Conductors; Copper alloys; Creep; Grain boundaries; Microstructure; Plasma temperature; Samarium alloys; Stress; Testing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1989.78003

Filename

78003