A 4.7-10.5-GHz Ultra-wideband CMOS LNA Using Inductive Inter-stage Bandwidth Enhancement Technique

Author

Wang, Yanjie ; Iniewski, Kris

Author_Institution

Dept. of Electr. & Comput. Eng., Alberta Univ., Edmonton, AB

Volume

2

fYear

2006

fDate

6-9 Aug. 2006

Firstpage

215

Lastpage

219

Abstract

In this paper, a new CMOS low noise amplifier (LNA) is designed using inductive interstage network for ultra- wideband (UWB) receiver in a standard TSMC 0.18 mum CMOS technology. The Spectre simulations show that the proposed UWB LNA achieves a flat 3-dB gain bandwidth of 4.7 GHz to 10.5 GHz, a power gain of 12 dB, a minimum noise figure of 3.9 dB and a total power dissipation of 7.2 mW from a 1.2 V power supply.

Keywords

CMOS analogue integrated circuits; low noise amplifiers; microwave amplifiers; microwave receivers; ultra wideband communication; CMOS low noise amplifier; Spectre simulations; frequency 4.7 GHz to 10.5 GHz; gain 12 dB; gain 3 dB; inductive inter-stage bandwidth enhancement technique; noise figure 3.9 dB; power 7.2 mW; size 0.18 mum; standard TSMC CMOS technology; ultra-wideband CMOS LNA; ultra-wideband receiver; voltage 1.2 V; Band pass filters; Bandwidth; Broadband amplifiers; Character generation; Impedance matching; Inductors; Parasitic capacitance; Radiofrequency amplifiers; Topology; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. MWSCAS '06. 49th IEEE International Midwest Symposium on

Conference_Location

San Juan

ISSN

1548-3746

Print_ISBN

1-4244-0172-0

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2006.382248

Filename

4267326