DocumentCode :
2999496
Title :
Room-temperature single-electron transfer and detection with silicon nanodevices
Author :
Nishiguchi, Katsuhiko ; Fujiwara, Akira ; Ono, Yukinori ; Inokawa, Hiroshi ; Takahashi, Yasuo
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Kanagawa, Japan
fYear :
2004
fDate :
13-15 Dec. 2004
Firstpage :
199
Lastpage :
202
Abstract :
Transfer and subsequent detection of single electrons are demonstrated at room temperature using a silicon-on-insulator nanodevice. The turnstile, which is composed of two Si-wire-FETs with a fine gate, enables us to transfer single electrons by opening and closing the two FETs alternately. The transferred individual electrons are stored in a single-electron box and detected by the electrometer with single-electron resolution. The present device achieves high-speed transfer and long retention.
Keywords :
electron transport theory; silicon-on-insulator; single electron devices; electrometer; room-temperature single-electron transfer; silicon nanodevices; silicon-on-insulator nanodevice; single electron detection; single electron transfer; single-electron box; single-electron resolution; Erbium; FETs; Fabrication; Information science; Laboratories; Oxidation; Silicon on insulator technology; Single electron transistors; Temperature sensors; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
Type :
conf
DOI :
10.1109/IEDM.2004.1419107
Filename :
1419107
Link To Document :
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