DocumentCode
2999637
Title
A 5-GHz SiGe RF-Driven Cascode Power Amplifier
Author
Weng, Jie ; Hella, Mona
Author_Institution
Rensselaer Polytech. Inst., Troy
Volume
2
fYear
2006
fDate
6-9 Aug. 2006
Firstpage
285
Lastpage
288
Abstract
The design of a highly linear, two-stage 5 GHz SiGe HBT power amplifier is presented. It employs low-breakdown high-fT transistors in a cascode configuration with a novel biasing technique to boost the output power level. The novel biasing scheme eliminates the need for high breakdown transistors whose performance at high frequencies is limited. The amplifier has a gain of 18 dB, linear output power of 21 dBm while consuming 165 mA from 3 V DC supply.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; microwave bipolar transistors; microwave power amplifiers; HBT power amplifier; RF-driven power amplifier; SiGe; biasing technique; cascode power amplifier; current 165 mA; frequency 5 GHz; gain 18 dB; high breakdown transistors; low-breakdown high-fT transistors; voltage 3 V; Breakdown voltage; Circuits; Electric breakdown; Frequency; Germanium silicon alloys; High power amplifiers; Optical amplifiers; Power amplifiers; Power generation; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2006. MWSCAS '06. 49th IEEE International Midwest Symposium on
Conference_Location
San Juan
ISSN
1548-3746
Print_ISBN
1-4244-0172-0
Electronic_ISBN
1548-3746
Type
conf
DOI
10.1109/MWSCAS.2006.382267
Filename
4267345
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