Metal emitter SiGe:C HBTs

Author

Donkers, J.J.T.M. ; Vanhoucke, T. ; Agarwal, Prabhakar ; Hueting, R.J.E. ; Meunier-Beillard, P. ; Vijayaraghavan, M.N. ; Magnée, P. H C ; Verheijen, M.A. ; de Kort, R. ; Slotboom, J.W.

Author_Institution

Philips Res. Leuven, Belgium

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

243

Lastpage

246

Abstract

SiGe:C heterojunction bipolar transistors (HBTs) offer high cut-off frequencies, f_T, but low open base breakdown voltages, BV_CEO, due to the relatively high current gain, h_FE. In this paper, we show that the integration of a metal emitter, made by complete silicidation of a mono-emitter, increases the base current, I_B without reducing the collector current, I_C. Hence, the BV_CEO is increased without affecting the f_T. Furthermore, this metal emitter reduces the emitter series resistance, R_E, and increases the f_T compared with a mono-emitter. SiGe:C HBTs with f_T=230GHz and BV_CEO=1.8V have been realised using a metal emitter in a self-aligned integration scheme.

Keywords

Ge-Si alloys; carbon; heterojunction bipolar transistors; millimetre wave bipolar transistors; 1.8 V; 230 GHz; SiGe:C; SiGe:C HBT; base current; collector current; current gain; cut-off frequency; emitter series resistance; heterojunction bipolar transistors; metal emitter; mono-emitter silicidation; open base breakdown voltage; self-aligned integration scheme; Atomic layer deposition; Bipolar transistors; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Nickel; Silicidation; Silicon germanium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419121

Filename

1419121