DocumentCode
2999815
Title
SiGe HBT technology with fmax/fT=350/300 GHz and gate delay below 3.3 ps
Author
Khater, M. ; Rieh, J.-S. ; Adam, T. ; Chinthakindi, A. ; Johnson, J. ; Krishnasamy, R. ; Meghelli, M. ; Pagette, F. ; Sanderson, D. ; Schnabel, C. ; Schonenberg, K.T. ; Smith, P. ; Stein, K. ; Strieker, A. ; Jeng, S.J. ; Ahlgren, D. ; Freeman, G.
Author_Institution
IBM Microelectron., Hopewell Junction, NY, USA
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
247
Lastpage
250
Abstract
This work reports on SiGe HBT technology with fmax and fT of 350 GHz and 300 GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any Si-based transistor in terms of combined performance of fmax and fT both of which exhibit 300 GHz and above. Associated BVCEO and BVCBO are measured to be 1.7 V and 5.6 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high fmax and fT values are also discussed.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; 1.7 V; 300 GHz; 350 GHz; 5.6 V; Si-based transistor; SiGe; SiGe HBT technology; bias condition; device dimension; device performance; gate delay; heterojunction bipolar transistor; Bandwidth; Capacitance; Data mining; Delay; Germanium silicon alloys; Heterojunction bipolar transistors; Large scale integration; Radio frequency; Silicides; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419122
Filename
1419122
Link To Document