Title :
SiGe HBT technology with fmax/fT=350/300 GHz and gate delay below 3.3 ps
Author :
Khater, M. ; Rieh, J.-S. ; Adam, T. ; Chinthakindi, A. ; Johnson, J. ; Krishnasamy, R. ; Meghelli, M. ; Pagette, F. ; Sanderson, D. ; Schnabel, C. ; Schonenberg, K.T. ; Smith, P. ; Stein, K. ; Strieker, A. ; Jeng, S.J. ; Ahlgren, D. ; Freeman, G.
Author_Institution :
IBM Microelectron., Hopewell Junction, NY, USA
Abstract :
This work reports on SiGe HBT technology with fmax and fT of 350 GHz and 300 GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any Si-based transistor in terms of combined performance of fmax and fT both of which exhibit 300 GHz and above. Associated BVCEO and BVCBO are measured to be 1.7 V and 5.6 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high fmax and fT values are also discussed.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; 1.7 V; 300 GHz; 350 GHz; 5.6 V; Si-based transistor; SiGe; SiGe HBT technology; bias condition; device dimension; device performance; gate delay; heterojunction bipolar transistor; Bandwidth; Capacitance; Data mining; Delay; Germanium silicon alloys; Heterojunction bipolar transistors; Large scale integration; Radio frequency; Silicides; Silicon germanium;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419122
