• DocumentCode
    2999901
  • Title

    Relaxation-based harmonic balance technique for semiconductor device simulation

  • Author

    Troyanovsky, B. ; Zhiping Yu ; So, L. ; Dutton, R.W.

  • Author_Institution
    Center for Integrated Syst., Stanford Univ., CA, USA
  • fYear
    1995
  • fDate
    5-9 Nov. 1995
  • Firstpage
    700
  • Lastpage
    703
  • Abstract
    Harmonic and intermodulation distortion effects play an important role in numerous analog applications, particularly in such areas as wireless communication systems. In this paper, we present a two-dimensional harmonic balance semiconductor device simulator which accurately models these nonlinear effects at the physical (drift-diffusion) level. The simulator is based on Stanford University´s PISCES code, and supports the full range of physical models and features present in the time-domain version of the program. A modified block Gauss-Seidel-Newton nonlinear relaxation scheme is developed to efficiently handle the extremely large size of two-dimensional harmonic balance semiconductor device simulation problems.
  • Keywords
    circuit analysis computing; intermodulation distortion; relaxation theory; semiconductor device models; Gauss-Seidel-Newton nonlinear relaxation; harmonic balance technique; semiconductor device simulation; two-dimensional harmonic balance; Analytical models; Circuit simulation; Ear; Frequency domain analysis; Gaussian processes; Intermodulation distortion; Radio frequency; Semiconductor devices; Time domain analysis; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design, 1995. ICCAD-95. Digest of Technical Papers., 1995 IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA, USA
  • ISSN
    1092-3152
  • Print_ISBN
    0-8186-8200-0
  • Type

    conf

  • DOI
    10.1109/ICCAD.1995.480206
  • Filename
    480206