DocumentCode
2999901
Title
Relaxation-based harmonic balance technique for semiconductor device simulation
Author
Troyanovsky, B. ; Zhiping Yu ; So, L. ; Dutton, R.W.
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
fYear
1995
fDate
5-9 Nov. 1995
Firstpage
700
Lastpage
703
Abstract
Harmonic and intermodulation distortion effects play an important role in numerous analog applications, particularly in such areas as wireless communication systems. In this paper, we present a two-dimensional harmonic balance semiconductor device simulator which accurately models these nonlinear effects at the physical (drift-diffusion) level. The simulator is based on Stanford University´s PISCES code, and supports the full range of physical models and features present in the time-domain version of the program. A modified block Gauss-Seidel-Newton nonlinear relaxation scheme is developed to efficiently handle the extremely large size of two-dimensional harmonic balance semiconductor device simulation problems.
Keywords
circuit analysis computing; intermodulation distortion; relaxation theory; semiconductor device models; Gauss-Seidel-Newton nonlinear relaxation; harmonic balance technique; semiconductor device simulation; two-dimensional harmonic balance; Analytical models; Circuit simulation; Ear; Frequency domain analysis; Gaussian processes; Intermodulation distortion; Radio frequency; Semiconductor devices; Time domain analysis; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design, 1995. ICCAD-95. Digest of Technical Papers., 1995 IEEE/ACM International Conference on
Conference_Location
San Jose, CA, USA
ISSN
1092-3152
Print_ISBN
0-8186-8200-0
Type
conf
DOI
10.1109/ICCAD.1995.480206
Filename
480206
Link To Document