DocumentCode
3000166
Title
Evaluation of Fermi level pinning in low, midgap and high workfunction metal gate electrodes on ALD and MOCVD HfO2 under high temperature exposure
Author
Jha, Rashmi ; Lee, Jaehoon ; Chen, Bei ; Lazar, Heather ; Gurganus, Jason ; Biswas, Nivedita ; Majhi, Prashant ; Brown, George ; Misra, Veena
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
295
Lastpage
298
Abstract
The workfunction behavior and stability of several candidate metal gate electrodes on HfO2 was carefully examined and correlated with processing parameters such as anneal temperatures and oxygen exposures. Transition metals and their nitrides, binary metal alloys and refractory metals were studied on MOCVD HfO2 dielectrics of varying thicknesses. Binary low work function Mo-Ta alloys were also investigated on HfO2.
Keywords
Fermi level; MOCVD; atomic layer deposition; dielectric materials; hafnium compounds; molybdenum alloys; rapid thermal annealing; tantalum alloys; work function; Fermi level pinning; HfO2; MOCVD; Mo-Ta alloys; MoTa; anneal temperatures; atomic layer deposition; binary metal alloys; dielectric material; high temperature exposure; metal gate electrodes; metal gate stability; oxygen exposures; refractory metals; transition metals; workfunction behavior; Annealing; Capacitance-voltage characteristics; Channel bank filters; Dielectrics; Displays; Electrodes; Hafnium oxide; MOCVD; Stability; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419137
Filename
1419137
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