Substituted aluminum metal gate on high-k dielectric for low work-function and Fermi-level pinning free

Author

Park, Chang Seo ; Cho, Byung Jin ; Tang, Lei Jun ; Kwong, Dim-Lee

Author_Institution

Silicon Nano Device Lab., Dept. of Electr. & Comput. Eng., Singapore National University, Singapore

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

299

Lastpage

302

Abstract

Substituted aluminum (SA) metal gate on high-K gate dielectric is successfully demonstrated. Full substitution of polysilicon with Al is achieved in Ti/Al/polysilicon/HfAlON gate structure by a low temperature annealing at 450°C. The SA gate on HfAlON dielectric shows a very low work function of 4.25 eV, which is well suitable for bulk nMOSFETs. The SA process is fully free from Fermi level pinning problem. In addition, the SA process also shows improved uniformity in leakage current distribution compared to fully silicided (FUSI) metal gate.

Keywords

Fermi level; MOSFET; aluminium; annealing; dielectric materials; silicon; work function; 4.25 eV; 450 C; Fermi level pinning; Si-HfAlON; Ti; fully silicided metal gate; gate structure; high-k dielectric; leakage current distribution; nMOSFET; substituted aluminum metal gate; temperature annealing; work function; Aluminum; Annealing; Artificial intelligence; Capacitance-voltage characteristics; Doping; Furnaces; High-K gate dielectrics; MOSFET circuits; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419138

Filename

1419138