Title :
Demonstration of an extendable and industrial 300mm BEOL integration for the 65-nm technology node
Author :
Hinsinger, Oliver ; Fox, R. ; Sabouret, E. ; Goldberg, C. ; Verove, C. ; Besling, W. ; Brun, P. ; Josse, E. ; Monget, C. ; Belmont, O. ; Van Hassel, J. ; Sharma, B.G. ; Jacquemin, J.P. ; Vannier, P. ; Humbert, A. ; Bunel, D. ; Gonella, R. ; Mastromatteo,
Author_Institution :
STMicroelectronics, Crolles, France
Abstract :
Given the much discussed challenges of interconnect scaling at the 65-nm node, the choice of process architecture is a key determinant of performance and extendibility. An alternate trench-first with hardmask integration is described in this work, including subsequent benefits. BEOL design rules are detailed for the 65-nm architecture, supporting both "low-k" and "ultra-low-k" backends, satisfying RC scaling requirements. Electrical parametric performance and yield are presented for a fully-integrated 300mm backend utilizing 65-nm design rules demonstrating the viability of this architecture for the 65-nm node and beyond.
Keywords :
integrated circuit interconnections; nanoelectronics; 300 mm; 65 nm; BEOL design; BEOL integration; RC scaling requirement; electrical parametric performance; electrical yield; hardmask integration; interconnect scaling; process architecture; Conductivity; Copper; Dielectric materials; Etching; Integrated circuit interconnections; Lithography; Materials reliability; Resists; Robustness; Wiring;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419144