Electrochemical characterization of InP and GaAs based structures for space solar cell applications

Author

Faur, Maria ; Faur, Mircea ; Flood, Dennis J. ; Jenkins, Phillip P. ; Goradia, Manju ; Wilt, David M.

Author_Institution

NASA Lewis Res. Center, Cleveland, OH, USA

Volume

2

fYear

1994

fDate

5-9 Dec 1994

Firstpage

1775

Abstract

In this paper the emphasis is on accurate majority carrier concentration EC-V profiling of structures based on InP and GaAs, using a newly developed electrolyte based on HF, CH₃COOH, o-H₃PO₄, C₉H₁₄CIN and NH₃F ₂. Some preliminary data on the use of this electrolyte for determining the energy distribution of surface and deep states of these structures, applicable to fabrication process optimization and radiation induced defects studies of solar cells, are also provided

Keywords

III-V semiconductors; crystal defects; deep levels; electrochemistry; electrolytes; gallium arsenide; indium compounds; photovoltaic power systems; radiation effects; solar cells; space vehicle power plants; surface states; C₉H₁₄CIN; CH₃COOH; GaAs; HF; InP; NH₃F₂; deep states; electrochemical characterization; electrolyte; energy distribution; fabrication process optimization; o-H₃PO₄; radiation induced defects; space solar cell; surface states; Capacitance-voltage characteristics; Etching; Gallium arsenide; Hafnium; Human computer interaction; Indium phosphide; Nonhomogeneous media; Photovoltaic cells; Semiconductor materials; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on

Conference_Location

Waikoloa, HI

Print_ISBN

0-7803-1460-3

Type

conf

DOI

10.1109/WCPEC.1994.520646

Filename

520646