Reliability of GaN-Based HEMT devices

Author

Menozzi, Roberto

Author_Institution

Dept. of Inf. Eng., Univ. of Parma, Parma

fYear

2008

fDate

July 28 2008-Aug. 1 2008

Firstpage

44

Lastpage

50

Abstract

This paper reviews the main problems characterizing the past and present of GaN-based HEMT reliability. Some general considerations on the maturity of this technology and published lifetesting extrapolations are followed by a review of physical degradation mechanisms, subdivided between temperature-activated and electrical ones, the latter generally linked with the much-debated ldquocurrent collapserdquo. The paper ends with some conclusive remarks on what has been achieved and what still lies ahead.

Keywords

III-V semiconductors; extrapolation; gallium compounds; high electron mobility transistors; life testing; semiconductor device reliability; wide band gap semiconductors; GaN; HEMT reliability; current collapse; electrical degradation; high electron mobility transistors; life testing extrapolations; physical degradation; temperature-activated degradation; Aluminum gallium nitride; Chemical technology; Degradation; Gallium nitride; Gold; HEMTs; History; Life testing; Stability; Temperature; HEMTs; gallium nitride; nitride devices; reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on

Conference_Location

Sydney, SA

ISSN

1097-2137

Print_ISBN

978-1-4244-2716-1

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2008.4802089

Filename

4802089